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Now downloading free:Philips buj101au 1

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Descr: . Electronic Components Datasheets Active components Transistors Philips buj101au_1.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ101AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V VCBO Collector-Base voltage (open emitter) - 700 V VCEO Collector-emitter voltage (open base) - 400 V IC Collector current (DC) - 1.5 A ICM Collector current peak value - 3 A Ptot Total power dissipation Tmb 25

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