HT Semiconductor uma3n free download

File name uma3n.pdf

UMA3N General purpose transistors (dual transistors) SOT-353 FEATURES Two DTA143T chips in a package Mounting cost and area be cut in half 1 Marking: A3 Equivalent circuit Absolute maximum ratings (Ta=25) Symbol Parameter Limits Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -100 mA PC Collector Dissipation 150 mW Tj Junction temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50A,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.5 A Emitter cut-off current IEBO VEB=4V,IC=0 - 0.5 A DC current gain hFE VCE=-5V,IC=-1mA 100 600 Collector-emitter saturation voltage VCE(sat) IC=-5mA,IB=-0.25mA -0.3 V Transition frequency fT VCE=-10V,IC=-5mA, f=100MHz 250 MHz Input resistor R1 3.29 4.7 6.11 K 1 JinYu www.htsemi.com semiconductor Date:2011/ 05