Philips phb2n50 1 free download

File name phb2n50_1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHB2N50 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 500 V mounting featuring high avalanche ID Drain current (DC) 2 A energy capability, stable off-state Ptot Total power dissipation 50 W characteristics, fast switching and RDS(ON) Drain-source on-state resistance 5 high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain 1 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ID Continuous drain current Tmb = 25