Philips buk444-800a-b 1 free download

File name buk444-800a-b_1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK444-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK444 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 1.4 1.2 A (SMPS), motor control, welding, Ptot Total power dissipation 30 30 W DC/DC and AC/DC converters, and RDS(ON) Drain-source on-state 6.0 8.0 in general purpose switching resistance applications. PINNING - SOT186 PIN CONFIGURATION SYMBOL PIN DESCRIPTION d case 1 gate 2 drain g 3 source case isolated 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 800 V VDGR Drain-gate voltage RGS = 20 k - 800 V