Microsemi 2n1893 2n720a free download

File name 2n1893_2n720a.pdf

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/182 Devices Qualified Level JAN 2N1893 2N720A JANTX 2N1893S JANTXV MAXIMUM RATINGS Ratings Symbol All Devices Units Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 120 Vdc Emitter-Base Voltage VEBO 7.0 Vdc Collector-Emitter Voltage (RBE = 10 ) VCER 100 Vdc TO-18 (TO-206AA)* Collector Current IC 500 mAdc 2N720A 2N720A 2N1893, S Total Power Dissipation @ TA = +250C (1) 0.5 0.8 PT W @ TC = +250C (2) 1.8 3.0 0 Operating & Storage Junction Temperature Range TJ, Tsrg -65 to +200 C THERMAL CHARACTERISTICS Characteristics Symbol 2N720A 2N1893, S Unit TO-5* 0 Thermal Resistance, Junction-to-Case RJC 97 58 C/W 2N1893, 2N1893S 0 0 0 1) Derate linearly 2.86 mW/ C for 2N720A, 4.57 mW/ C for 2N1893, S TA > 25 C 2) Derate linearly 10.3 mW/0C for 2N720A, 17.2 mW/0C for 2N1893, S TC > 250C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO Vdc IC = 30 mAdc 80 Collector-Emitter Breakdown Voltage