Supertex tc6320 free download

File name tc6320.pdf

TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description Integrated gate-to-source resistor The Supertex TC6320 consists of high voltage, low threshold Integrated gate-to-source Zener diode N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-to- Low threshold source resistors and gate-to-source Zener diode clamps Low on-resistance which are desired for high voltage pulser applications. It is a Low input capacitance complimentary, high-speed, high voltage, gate-clamped N- Fast switching speeds and P-channel MOSFET pair, which utilizes an advanced Free from secondary breakdown vertical DMOS structure and Supertex's well-proven Low input and output leakage silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of Independent, electrically isolated N- and P-channels bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Applications Characteristic of all MOS structures, this device is free High voltage pulsers from thermal runaway and thermally induced secondary breakdown. Amplifiers Buffers Supertex's vertical DMOS FETs are ideally suited to a Piezoelectric transducer drivers wide range of switching and amplifying applications where General purpose line drivers very low threshold voltage, high breakdown voltage, high Logic level interfaces input impedance, low input capacitance, and fast switching speeds are desired. Typical Application Circuit VDD VH +100V OE 10nF INA INB 10nF -100V VSS VL