ST 4012 free download

File name 4012.pdf

HCF4012B DUAL 4 INPUT NAND GATE s s s s s s s s PROPAGATION DELAY TIME tPD = 60ns (Typ.) at VDD = 10V BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DIP SOP ORDER CODES PACKAGE DIP SOP TUBE HCF4012BEY HCF4012BM1 T&R HCF4012M013TR DESCRIPTION The HCF4012B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4012B DUAL 4-INPUT NAND GATE provides the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. PIN CONNECTION September 2001 1/7 HCF4012B INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 6, 8 2, 3, 4, 5 9, 10, 11, 12 1, 13 7 14 SYMBOL NC A, B, C, D E, F, G, H J, K VSS VDD NAME AND FUNCTION Not Connected Data Inputs Data Inputs Data Outputs Negative Supply Voltage Positive Supply Voltage TRUTH TABLE INPUTS A, B, C, D E, F, G, H L H L H OUTPUTS J, K H H H L LOGIC DIAGRAM L L H H ABSOLUTE MAXIMUM RATINGS Symbol VDD VI II PD Top Tstg Supply Voltage DC Input Voltage DC Input Current Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature Storage Temperature Parameter Value -0.5 to +22 -0.5 to VDD + 0.5 ± 10 200 100 -55 to +125 -65 to +150 Unit V V mA mW mW °C °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol VDD VI Top Supply Voltage Input Voltage Operating Temperature Parameter Value 3 to 20 0 to VDD -55 to 125 Unit V V °C 2/7 HCF4012B DC SPECIFICATIONS Test Condition Symbol Parameter VI (V) 0/5 0/10 0/15 0/20 0/5 0/10 0/15 5/0 10/0 15/0 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5 VO (V) |IO| VDD (µA) (V) 5 10 15 20 5 10 15 5 10 15 5 10 15 5 10 15 5 5 10 15 5 10 15 18 TA = 25°C Min. Typ. 0.01 0.01 0.01 0.02 4.95 9.95 14.95 0.05 0.05 0.05 3.5 7 11 1.5 3 4 -1.36 -0.44 -1.1 -3.0 0.44 1.1 3.0 -3.2 -1 -2.6 -6.8 1 2.6 6.8 ±10-5 5 ±0.1 7.5 -1.15 -0.36 -0.9 -2.4 0.36 0.9 2.4 ±1 3.5 7 11 1.5 3 4 -1.1 -0.36 -0.9 -2.4 0.36 0.9 2.4 ±1 Max. 0.25 0.5 1 5 4.95 9.95 14.95 0.05 0.05 0.05 3.5 7 11 1.5 3 4 Value -40 to 85°C Min. Max. 7.5 15 30 150 4.95 9.95 14.95 0.05 0.05 0.05 -55 to 125°C Min. Max. 7.5 15 30 150 Unit IL Quiescent Current µA VOH High Level Output Voltage Low Level Output Voltage High Level Input Voltage Low Level Input Voltage Output Drive Current VOL VIH VIL IOH IOL Output Sink Current Input Leakage Current Input Capacitance 0/5 0/5 0/10 0/15 0/5 0/10 0/15 0/18 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <