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Now downloading free:Philips phd10n10e 1

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Electronic components, integrated circuits, semiconductor - datasheets and schematics

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Descr: . Electronic Components Datasheets Active components Transistors Philips phd10n10e_1.pdf
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Philips Semiconductors Product Specification PowerMOS transistor PHD10N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suuitable for VDS Drain-source voltage 100 V surface mounting. The device is ID Drain current (DC) 11 A intended for use in Switched Mode Ptot Total power dissipation 60 W Power Supplies (SMPS), motor Tj Junction temperature 175

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