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File name: | buj103a_hg_2.pdf [preview buj103a hg 2] |
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Mfg: | Philips |
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Descr: | . Electronic Components Datasheets Active components Transistors Philips buj103a_hg_2.pdf |
Group: | Electronics > Components > Transistors |
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File name buj103a_hg_2.pdf DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V VCBO Collector-Base voltage (open emitter) - 700 V VCEO Collector-emitter voltage (open base) - 400 V IC Collector current (DC) 2 - 4 A ICM Collector current peak value - 8 A Ptot Total power dissipation Tmb 25 |
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