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HCF4085B DUAL 2-WIDE 2-INPUT AND-OR INVERTER GATE s s s s s s s s MEDIUM-SPEED OPERATION tPHL = 90ns, tPLH = 125ns (Typ.) at 10V INDIVIDUAL INHIBIT CONTROLS QUIESCENT CURRENT SPECIFIED UP TO 20V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DIP SOP ORDER CODES PACKAGE DIP SOP TUBE HCF4085BEY HCF4085BM1 T&R HCF4085M013TR DESCRIPTION HCF4085B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. HCF4085B contains a pair of AND-OR INVERT gates, each consisting of two 2-input AND gates driving a 3-input NOR gate. Individual inhibit controls are provided for both A-O-I gates. PIN CONNECTION September 2002 1/8 HCF4085B INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 2, 12, 13 5, 6, 8, 9 10, 11 3, 4 7 14 SYMBOL A1 to D1 A2 to D2 INHIBIT 1, 2 E1, E2 VSS VDD NAME AND FUNCTION Data Inputs Data Inputs Inhibit Control Inputs Data Outputs Negative Supply Voltage Positive Supply Voltage TRUTH TABLE A X H X B X H X ALL OTHER C D INHIBIT H L L OUT L L L H X X X X H H COMBINATIONS LOGIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDD VI II PD Top Tstg Supply Voltage DC Input Voltage DC Input Current Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature Storage Temperature Parameter Value -0.5 to +22 -0.5 to VDD + 0.5 ± 10 200 100 -55 to +125 -65 to +150 Unit V V mA mW mW °C °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. 2/8 HCF4085B RECOMMENDED OPERATING CONDITIONS Symbol VDD VI Top Supply Voltage Input Voltage Operating Temperature Parameter Value 3 to 20 0 to VDD -55 to 125 Unit V V °C DC SPECIFICATIONS Test Condition Symbol Parameter VI (V) 0/5 0/10 0/15 0/20 0/5 0/10 0/15 5/0 10/0 15/0 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5 VO (V) |IO| VDD (µA) (V) 5 10 15 20 5 10 15 5 10 15 5 10 15 5 10 15 5 5 10 15 5 10 15 18 TA = 25°C Min. Typ. 0.02 0.02 0.02 0.04 4.95 9.95 14.95 0.05 0.05 0.05 3.5 7 11 1.5 3 4 -1.36 -0.44 -1.1 -3.0 0.44 1.1 3.0 -3.2 -1 -2.6 -6.8 1 2.6 6.8 ±10-5 5 -1.15 -0.36 -0.9 -2.4 0.36 0.9 2.4 3.5 7 11 1.5 3 4 -1.1 -0.36 -0.9 -2.4 0.36 0.9 2.4 Max. 1 2 4 20 4.95 9.95 14.95 0.05 0.05 0.05 3.5 7 11 1.5 3 4 Value -40 to 85°C Min. Max. 30 60 120 600 4.95 9.95 14.95 0.05 0.05 0.05 -55 to 125°C Min. Max. 30 60 120 600 Unit IL Quiescent Current µA VOH High Level Output Voltage Low Level Output Voltage High Level Input Voltage Low Level Input Voltage Output Drive Current VOL VIH VIL IOH IOL Output Sink Current Input Leakage Current Input Capacitance 0/5 0/5 0/10 0/15 0/5 0/10 0/15 0/18 <1 <1 <1 <1 <1 <1