File name 4505.pdfINTEGRATED CIRCUITS
DATA SHEET
For a complete data sheet, please also download:
· The IC04 LOCMOS HE4000B Logic Family Specifications HEF, HEC · The IC04 LOCMOS HE4000B Logic Package Outlines/Information HEF, HEC
HEF4505B LSI 64-bit, 1-bit per word random access read/write memory
Product specification File under Integrated Circuits, IC04 January 1995
Philips Semiconductors
Product specification
64-bit, 1-bit per word random access read/write memory
DESCRIPTION The HEF4505B is a 64-bit, 1-bit per word, fully decoded and completely static, random access memory. The memory is strobed for reading or writing only when the strobe input (ST), chip enable inputs (CE1 and CE2) are HIGH simultaneously. The output data is available at the data output (DOUT) only when the memory is strobed, the read/write input (R/W) is HIGH and after the read access time has passed. Note that the three-state output is initially disabled and always goes to the LOW state before data is valid. The output is disabled in the high-impedance OFF-state, when the memory is not strobed or R/W is LOW. R/W may remain HIGH during a read cycle or LOW during a write cycle. The output data has the same polarity as the input data. HEF4505BP(N): HEF4505BD(F):
HEF4505B LSI
Fig.1 Pinning diagram.
14-lead DIL; plastic (SOT27-1) 14-lead DIL; ceramic (cerdip) (SOT73)
( ): Package Designator North America PINNING A0 to A5 CE1, CE2 R/W ST DIN DOUT FUNCTION TABLE ST, CE1, CE2 R/W L H L H Note 1. H = HIGH state (the more positive voltage) L = LOW state (the less positive voltage) Z = high-impedance OFF-state L L H H Z Z Z equal to memory data DOUT MODE disabled write disabled read address inputs chip enable inputs read/write input strobe input data input data output Note 1. Minimum standby voltage for data retention is 3 V. FAMILY DATA, IDD LIMITS category LSI See Family Specifications SUPPLY VOLTAGE RATING -0,5 to +15 OPERATING 4,5 to 15 V
January 1995
2
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64-bit, 1-bit per word random access read/write memory HEF4505B LSI
Philips Semiconductors
Product specification
64-bit, 1-bit per word random access read/write memory
AC CHARACTERISTICS VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times 20 ns VDD V Minimum strobe pulse width; LOW 5 10 15 5 Read cycle time 10 15 5 Write cycle time 10 15 5 Read access time 10 15 5 Address recovery time 10 15 5 Read recovery time 10 15 5 Write recovery time 3-state propagation delays 5 Output disable times Set-up times |