Fairchild Semiconductor irls640a free download

File name irls640a.pdf

Advanced Power MOSFET IRLS640A FEATURES BVDSS = 200 V ! Logic-Level Gate Drive ! Avalanche Rugged Technology RDS(on) = 0.18 ! Rugged Gate Oxide Technology ID = 9.8 A ! Lower Input Capacitance ! Improved Gate Charge TO-220F ! Extended Safe Operating Area ! Lower Leakage Current : 10 A (Max.) @ VDS = 200V ! Lower RDS(ON) : 0.145 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 200 V Continuous Drain Current (TC=25) 9.8 ID A Continuous Drain Current (TC=100) 6.2 IDM Drain Current-Pulsed 63 A VGS Gate-to-Source Voltage