Microsemi 2n1487 2n1488 2n1489 2n1490 free download

File name 2n1487_2n1488_2n1489_2n1490.pdf

TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/208 Devices Qualified Level 2N1487 2N1488 2N1489 2N1490 MAXIMUM RATINGS Ratings Symbol 2N1487 2N1488 Unit 2N1498 2N1490 Collector-Emitter Voltage VCEO 40 55 Vdc Collector-Base Voltage VCBO 60 100 Vdc Collector-Emitter Voltage VCEX 60 100 Vdc Emitter-Base Voltage VEBO 10 Vdc Base Current IB 3.0 Adc Collector Current IC 6.0 Adc Total Power Dissipation @ TC = 250C (1) PT 75 W TO-33* 0 Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C (TO-204AA) THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit 0 Thermal Resistance, Junction-to-Case RJC 2.33 C/W 1) Derate linearly @ 0.429 W/0C for TC > 250C *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc 2N1487, 2N1489 V(BR)CEO 40 Vdc 2N1488, 2N1490 55 Collector-Emitter Breakdown Voltage IC = 200