Microsemi 2n3498 2n3499 2n3450 2n3451 free download

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TECHNICAL DATA NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366 Devices Qualified Level JAN 2N3498 2N3499 2N3500 2N3501 JANTX 2N3498L 2N3499L 2N3500L 2N3501L JANTXV JANS MAXIMUM RATINGS 2N3498* 2N3500* Ratings Symbol 2N3499* 2N3501* Unit Collector-Emitter Voltage VCEO 100 150 Vdc Collector-Base Voltage VCBO 100 150 Vdc Emitter-Base Voltage VEBO 6.0 6.0 Vdc Collector Current IC 500 300 mAdc TO-5* Total Power Dissipation @ TA = 250C (1) 1.0 W 2N3498L, 2N3499L PT 2N3500L, 2N3501L @ TC = 250C (2) 5.0 W 0 Operating & Storage Junction Temp. Range TJ, Tstg -55 to +200 C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance: Junction-to-Case RJC 35 0 C/W Junction-to-Ambient RJA 175 TO-39* (TO-205AD) *Electrical characteristics for "L" suffix devices are identical to the "non L" corresponding devices 2N3498, 2N3499 1) Derate linearly 5.71 W/0C for TA > 250C 2N3500, 2N3501 2) Derate linearly 28.6 W/0C for TC > 250C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS