Fairchild Semiconductor ndp6060 ndb6060 free download

File name ndp6060_ndb6060.pdf

March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 48A, 60V. RDS(ON) = 0.025 @ VGS=10V. transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density Critical DC electrical parameters specified at elevated process has been especially tailored to minimize on-state temperature. resistance, provide superior switching performance, and Rugged internal source-drain diode can eliminate the need withstand high energy pulses in the avalanche and for an external Zener diode transient suppressor. commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC 175