Microsemi 2n3762 2n3763 2n3764 2n3765 free download

File name 2n3762_2n3763_2n3764_2n3765.pdf

TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices Qualified Level JAN 2N3762 2N3763 2N3764 2N3765 JANTX 2N3762L 2N3763L JANTXV MAXIMUM RATINGS 2N3762* 2N3763* Ratings Symbol Unit 2N3764 2N3765 Collector-Emitter Voltage VCEO 40 60 Vdc Collector-Base Voltage VCBO 40 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc TO-39* (TO-205AD) 2N3762, 2N3763 Collector Current IC 1.5 Adc 2N3762* 1 2N3764 2 2N3763* 2N3765 Total Power Dissipation @ TA = +250C PT 1.0 0.5 W 0 Operating & Storage Junction Temp. Range Top, Tstg -55 to +200 C TO-5* THERMAL CHARACTERISTICS 2N3762L, 2N3763L Characteristics Symbol Max. Unit 2N3762* 2N3764 2N3763* 2N3765 0 Thermal Resistance Junction-to-Case RJC 60 88 C/W *Electrical characteristics for "L" suffix devices are identical to the "non L" corresponding devices TO-46* (TO-206AB) 1) Derate linearly at 5.71 mW/0C for TA > +250C 2N3764, 2N3765 2) Derate linearly at 2.86 mW/0C for TA > +250C