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2SD2101 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 3 k (Typ) 12 3 150 (Typ) 3 2SD2101 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Rating 200 200 7 10 15 2 30 150 ­55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 200 200 170 7 -- -- 1500 -- -- -- -- Typ -- -- -- -- -- -- -- -- -- -- -- Max -- -- -- -- 10 50 -- 1.5 3.0 2.0 3.5 V V Unit V V V V µA Test conditions I C = 0.1 mA, IE = 0 I C = 25 mA, RBE = I C = 5 A, L = 5 mH I E = 50 mA, IC = 0 VCB = 180 V, IE = 0 VCE = 180 V, RBE = VCE = 3 V, IC = 5 A*1 I C = 5 A, IB = 10 mA*1 I C = 10 A, IB = 100 mA*1 I C = 5 A, IB = 10 mA*1 I C = 10 A, IB = 100 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(SUS) V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 2 2SD2101 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 20 10 Collector current IC (A) 5 iC (peak) DC ) s °C 1m 25 = s m (T C 0 =1 tion PW era Op Area of Safe Operation 20 2 IC (max) 1.0 0.5 0.2 0.1 0.05 0.02 Ta = 25°C 1 Shot Pulse 1 10 0 50 100 Case temperature TC (°C) 150 3 10 30 100 300 Collector to emitter voltage VCE (V) Typical Output Characteristics 10 TC = 25°C 1.6 1.4 1.2 6 1.0 0.8 DC Current Transfer Ratio vs. Collector Current 10,000 DC current transfer ratio hFE 2.0 PC = 30 Collector current IC (A) 8 1.8 3,000 1,000 300 TC = 75 °C W ­2 5° C 4 0.6 0.4 mA 25°C 100 30 10 0.1 VCE = 3 V 2 IB = 0 0 1 2 3 4 5 Collector to emitter voltage VCE (V) 0.3 1.0 3 10 30 Collector current IC (A) 100 3 2SD2101 Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current 10 TC = 25°C 3 VBE (sat) 1.0 VCE (sat) 0.3 500 lC/lB = 200 200 0.1 0.1 0.3 1.0 3 10 30 Collector current IC (A) 100 Transient Thermal Resistance 10 Thermal resistance j-c (°C/W) 3 TC = 25°C 1.0 0.3 0.1 1m 10 m 100 m 1.0 Time t (s) 10 100 1,000 4 10.0 ± 0.3 7.0 ± 0.3 3.2 ± 0.2 2.8 ± 0.2 2.5 ± 0.2 Unit: mm 0.6 5.0 ± 0.3 2.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 12.0 ± 0.3 4.45 ± 0.3 2.5 14.0 ± 1.0 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220FM -- Conforms 1.8 g 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 17.0 ± 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or othe