Hitachi 2SK1056, 2SK1057, 2SK1058 free download

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2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET ADE-208-1244 (Z) 1st. Edition Mar. 2001 Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features · · · · · · · Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SK1056, 2SK1057, 2SK1058 Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1056 2SK1057 2SK1058 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C VGSS ID I DR Pch* Tch Tstg 1 Symbol VDSX Ratings 120 140 160 ±15 7 7 100 150 ­55 to +150 Unit V V A A W °C °C 2 2SK1056, 2SK1057, 2SK1058 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1056 V(BR)DSX 2SK1057 2SK1058 Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 1. Pulse test V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off 120 140 160 ±15 0.15 -- 0.7 -- -- -- -- -- -- -- -- 1.0 600 350 10 180 60 -- 1.45 12 1.4 -- -- -- -- -- V V V S pF pF pF ns ns VDD = 20 V, ID = 4 A, I G = ±100 µA, VDS = 0 I D = 100 mA, VDS = 10 V I D = 7 A, VGD = 0 *1 I D = 3 A, VDS = 10 V *1 VGS = ­5 V, VDS = 10 V, f = 1 MHz Typ -- Max -- Unit V Test conditions I D = 10 mA, VGS = ­10 V 3 2SK1056, 2SK1057, 2SK1058 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) 20 Ta = 25°C ID max (Continuous) P PW 5 PW W = = 1 10 0 m = 0 s 1 m 1 s s sh 1 2 1 ot sh sh ot ot 1.0 C D O ra pe tio n (T C = 25 ) °C Maximum Safe Operation Area 10 100 50 Drain Current ID (A) 0.5 2SK1056 0 50 100 Case Temperature TC (°C) 150 0.2 5 2SK1057 2SK1058 500 10 20 50 100 200 Drain to Source Voltage VDS (V) Typical Output Characteristics 10 VGS = 10 V 9 8 7 6 4 5 4 2 Pch = Typical Transfer Characteristics 1.0 ­2 5°C 25 75 8 Drain Current ID (A) TC = 25°C Drain Current ID (A) 0.8 VDS = 10 V 6 0.6 0.4 3 100 W 0.2 2 1 0 0 10 20 40 50 30 Drain to Source Voltage VDS (V) 0 0.4 0.8 1.6 2.0 1.2 Gate to Source Voltage VGS (V) 4 T C= 2SK1056, 2SK1057, 2SK1058 Drain to Source Saturation Voltage vs. Drain Current 10 Drain to Source Saturation Voltage VDS (on) (V) 5 VGD = 0 Drain to Source Voltage vs. Gate to Source Voltage 10 Drain to Source Voltage VDS (V) 8 TC = 25°C 25 °C ° 75 C TC 2 1.0 0.5 C 5° ­2 = 6 5A 4 2 0.2 0.1 0.1 2A ID = 1 A 6 2 4 8 10 Gate to Source Voltage VGS (V) 0.2 0.5 1.0 2 Drain Current ID (A) 5 10 0 Input Capacitance vs. Gate Source Voltage Forward Transfer Admittance yfs (S) 1000 Input Capacitance Ciss (pF) 3.0 1.0 0.3 0.1 0.03 0.01 0.003 10 k Forward Tran