Hitachi 2SK1165, 2SK1166 free download

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2SK1165, 2SK1166 Silicon N-Channel MOS FET ADE-208-1252 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features · · · · · Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1165, 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1165 2SK1166 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 12 48 12 100 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1165, 2SK1166 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1165 V(BR)DSS 2SK1166 V(BR)GSS I GSS 450 500 ±30 -- -- -- -- -- -- ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 -- -- |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 6.0 -- -- -- -- -- -- -- -- -- -- 0.40 0.45 10 1450 410 55 20 70 120 60 1.0 450 3.0 0.55 0.60 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = 12 A, VGS = 0 I F = 12 A, VGS = 0, diF/dt = 100 A/µs I D = 6 A, VGS = 10 V, RL = 5 I D = 6 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V I D = 1 mA, VDS = 10 V I D = 6 A, VGS = 10 V *1 Typ -- Max -- Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1165 I DSS 2SK1166 Gate to source cutoff voltage Static Drain to source 2SK1165 RDS(on) on state resistance 2SK1166 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test 3 2SK1165, 2SK1166 Power vs. Temperature Derating 120 Channel Dissipation Pch (W) 100 30 Drain Current ID (A) 80 10 3 1.0 0.3 0.1 0 50 100 Case Temperature TC (°C) 150 1 Ta = 25°C 10 Maximum Safe Operation Area 10 0 µs O is per Lim at ite ion d in by th R is A DS re (o a n µs D C PW ) 1 = 10 m O s pe ra 40 tio s (1 n (T sho t) C = 25 °C m ) 2SK1166 2SK1165 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 20 20 10 V 6V 16 Drain Current ID (A) 8V 5.5 V Drain Current ID (A) 16 Typical Transfer Characteristics VDS = 20 V Pulse Test 12 5.0 V 12 8 4.5 V 4 VGS = 4 V 0 20 10 30 40 Drain to Source Voltage VDS (V) 50 8 75°C ­25°C TC = 25°C 4 0 4 2 6 8 Gate to Source Voltage VGS (V) 10 4 2SK1165, 2SK1166 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 15 A Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source