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File name: | 5991-4657EN B1507A Power Device Capacitance Analyzer - Brochure c20140829 [8].pdf [preview 5991-4657EN B1507A Power Device Capacitance Analyzer - Brochure c20140829 [8]] |
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Model: | 5991-4657EN B1507A Power Device Capacitance Analyzer - Brochure c20140829 [8] 🔎 |
Original: | 5991-4657EN B1507A Power Device Capacitance Analyzer - Brochure c20140829 [8] 🔎 |
Descr: | Agilent 5991-4657EN B1507A Power Device Capacitance Analyzer - Brochure c20140829 [8].pdf |
Group: | Electronics > Other |
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File name 5991-4657EN B1507A Power Device Capacitance Analyzer - Brochure c20140829 [8].pdf Keysight Technologies B1507A Power Device Capacitance Analyzer Automatically evaluate all power device capacitance parameters (including Ciss, Coss, Crss, and Rg) under a wide range of operating voltages 02 | Keysight | Power Device Capacitance Analyzer - Brochure Crucial issues facing the power electronics industry Do you understand the full impact of device capacitance on increasing switching power supply frequencies? In general, higher switching frequencies allow power electronics circuits to be physically smaller and take up less area. However, as frequency increases the device on-resistance (Ron) becomes less important, and switching loss and driving loss become the dominant factors that determine overall circuit power loss. A power device's capacitance characteristics (which are non- linear) are key parameters that help determine both switching and driving losses. Reverse transfer capacitance (Crss) and gate resistance (Rg) determine the switching speed, while the input capacitance (Ciss) determines the gate driving condition. In addi- tion, the output capacitance (Coss) is also a key parameter in de- termining the switching loss for a resonant converter. Therefore, it has become more important than ever to accurately evaluate these parameters when designing power conversion circuits. Switching converter loss IGBT MOSFET GaN FET P (Drive loss ) = f *Qg* Vgs Dynamic SJ MOSFET P (Switching loss) f * (V * I * T) Rg, Crss, |
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