Motorola MMDF3N03HD free download

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF3N03HD/D Designer's TM Data Sheet Medium Power Surface Mount Products MMDF3N03HD Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors MiniMOSTM devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain­to­source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc­dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. · · · · · · · · TM DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS RDS(on) = 0.070 OHM D G S CASE 751­05, Style 11 SO­8 Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive -- Can Be Driven by Logic ICs Miniature SO­8 Surface Mount Package -- Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Avalanche Energy Specified Mounting Information for SO­8 Package Provided Source­1 Gate­1 Source­2 Gate­2 1 2 3 4 8 7 6 5 Drain­1 Drain­1 Drain­2 Drain­2 Top View MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain­to­Source Voltage Drain­to­Gate Voltage (RGS = 1.0 M) Gate­to­Source Voltage -- Continuous Drain Current -- Continuous @ TA = 25°C Drain Current -- Continuous @ TA = 100°C Drain Current -- Single Pulse (tp 10 µs) Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Single Pulse Drain­to­Source Avalanche Energy -- Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 8.0 mH, RG = 25 ) Thermal Resistance -- Junction to Ambient (1) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS ID ID IDM PD TJ, Tstg EAS RJA TL Value 30 30 ± 20 4.1 3.0 40 2.0 ­ 55 to 150 324 62.5 260 Unit Vdc Vdc Vdc Adc Apk Watts °C mJ °C/W °C DEVICE MARKING D3N03 ORDERING INFORMATION Device Reel Size Tape Width Quantity MMDF3N03HDR2 13 12 mm embossed tape 2500 units (1) When mounted on 2" square FR­4 board (1" square 2 oz. Cu 0.06" thick single sided) with one die operating, 10s max. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundarie